Alex Schafgans is the Head of Development & Engineering at ASML San Diego. Since joining ASML/Cymer in 2011 as a Scientist, Alex has played a pivotal role in advancing EUV Source technology. His work has spanned fundamental research and system-level engineering, contributing significantly to the definition, development, and industrialization of the breakthrough 250W EUV Source for high-volume semiconductor manufacturing. He has also led efforts in early demonstrations of 500W capability and the advancement of 1μm pre-pulse technologies, which are foundational to the upcoming 600W Source product architecture. He holds BS, MS, and PhD degrees in Physics from the University of California, San Diego.

Abstract: The ASML EUV scanner, a cornerstone of advanced high-volume semiconductor manufacturing, is among the most precisely engineered systems ever built. Central to its operation is the EUV light source, which generates high-power light through a laser-produced plasma. Developing a source with sufficient power was the final breakthrough that enabled EUV lithography to transition into high-volume production. However, scaling this technology also required industrializing the EUV source for reliability and consistency.
This talk will explore the journey of overcoming the physics and engineering challenges involved in creating the EUV light source. We will delve into the multidisciplinary efforts required to achieve extreme precision in mechanical and optical tolerancing—managing thermal, pressure, vibrational, and alignment effects across thousands of components. Key topics include the generation of ideal tin (Sn) droplets as plasma fuel, precise timing and energy control of the laser-plasma interaction, and management of the ionized Sn by-products.